Ultra-low Qrr silicon rectifiers enable power supply manufacturers to meet stringent performance and cost requirements
SANTA CLARA, Calif. – Nov. 10, 2009 – Qspeed Semiconductor is extending its leadership in silicon diode performance with the introduction of the H-Series family aimed at helping power supply manufacturers cost-effectively meet the challenges of today's high performance systems. Building on previous generations, Qspeed’s new 600V H-Series power factor correction (PFC) rectifiers have even lower reverse recovery charge (QRR) providing the highest switching efficiency of any silicon diode on the market.
Qspeed PFC diodes help designers meet demanding performance specifications by increasing system efficiency, reducing EMI and enabling the elimination or downsizing of other components. Because Qspeed solutions result in lower operating temperature, fewer components and reduced board/heatsink requirements, they are ideal for increasing power density, reducing costs and/or improving reliability. With the best performance-to-cost ratio of any commercially available devices, Qspeed’s products lead the industry in value.
The 600V H-Series 3A-12A products have a lower QRR temperature coefficient that minimizes switching losses at higher operating temperatures. They also have lower forward voltage (VF) for reduced conduction mode losses. Like all Qspeed diodes, the H-Series has a soft recovery waveform that results in lower EMI emissions. The devices are packaged in an internally isolated TO-220 with improved thermal resistance allowing this series to be extended to 12 amps.
Qspeed’s lower harmonic emissions improve the system EMI ratings and allow for the use of fewer snubbers. Qspeed’s high diode switching efficiency not only improves power supply efficiency but also reduces heat generation. In most cases, these benefits are achieved even after downsizing the PFC MOSFET and/or heatsink. Fewer components and lower operating temperatures enable higher power density designs and improve system reliability. By downsizing or eliminating components, designers lower their total bill of materials (BOM) costs.
“Our power supply customers are challenged with achieving unprecedented levels of efficiency and power density in a highly price competitive market,” said Mike Heitzman, president and CEO of Qspeed Semiconductor. “The H-Series has a unique combination of performance features that enables designers to meet higher performance specifications and regulatory requirements while reducing BOM costs and development schedules.”
Like the earlier X-Series and Q-Series families, the H-Series products are based on Qspeed’s proprietary silicon-based technology. Qspeed’s performance features are due to the innovative use of conventional materials and processes, which means customers benefit from more than 50 years of industry experience with silicon wafer processing. The result is premium performance at silicon costs and reliability levels.
Availability and pricing
Engineering samples of the H-Series diodes are available now and production quantities are planned for Q1 2010. Contact Qspeed’s local sales offices or distributors for pricing and delivery.
About Qspeed Semiconductor
Qspeed Semiconductor provides the industry’s highest performance silicon power devices to help reduce worldwide energy consumption. Based on proprietary technologies, the company’s portfolio includes highly efficient and cost-effective 300V and 600V power diodes for AC-to-DC power supplies, inverters, motor controls and other power applications greater than 150W. Headquartered in Santa Clara, Calif., Qspeed has a global sales and distribution network across Asia, North America and Europe. Visit www.qspeed.com for more information.
Editorial Contact:
Angie Hatfield
PR for Qspeed Semiconductor
angie@hatfieldcommunications.com
(425) 941 2895